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C3D25170H Datasheet Preview

C3D25170H Datasheet

Silicon Carbide Schottky Diode

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C3D25170H–Silicon Carbide Schottky Diode
Z-RecRectifier
Features
1700-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Halogen-Free; RoHS Complaint
Package
VRRM =
1700 V
IF; TC<135˚C = 26.3 A
Qc =
230 nC
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Maximum Ratings
Symbol
Parameter
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge
Current
Ptot Power Dissipation
Tc Maximum Case Temperature
TJ Operating Junction Range
Tstg Storage Temperature Range
TO-247 Mounting Torque
PIN 1
PIN 2
CASE
Part Number
C3D25170H
Package
TO-247-2
Marking
C3D25170
Value Unit
Test Conditions
Note
1700
1700
1700
V
V
V
26.3
99
57
117
88
377
163
135
A TC<135˚C
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==11
A TTCC==2151˚0C˚C, ,tPt=P=1100msm, sH, aHlfaSlfinSeinWe aWvaev,eD, =D1=1
W TTCC==2151˚0C˚C
˚C
-55 to
+175
-55 to
+135
1
8.8
˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com




Cree

C3D25170H Datasheet Preview

C3D25170H Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.8 2.5
3.2 4
V
IIFF
=
=
25
25
A
A
TTJJ==2157°5C°C
IR Reverse Current
20 100
100 400
μA
VVRR
=
=
1700
1700
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
230
nC VdiR/d=t 1=702000V,AI/Fμ=s 25 A
TJ = 25°C
C Total Capacitance
2079
187.5
97
pF
VVVRRR
=
=
=
0 V,
200
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Note
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.4
Unit
°C/W
Typical Performance
50
45
40
35
30
25
20 TTTJJJ===-275555°°°CCC
TJ =125°C
15 TJ =175°C
10
5
0
0123456
VF (V)
Figure 1. Forward Characteristics
7
8
7
6
5 TTTJJJ===-275555°°°CCC
TJ =125°C
4 TJ =175°C
3
2
1
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
VR (V)
Figure 2. Reverse Characteristics
2 C3D25170H Rev. -
Free Datasheet http://www.nDatasheet.com


Part Number C3D25170H
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 5 Pages
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