Datasheet4U Logo Datasheet4U.com

C3M0045065K - Silicon Carbide Power MOSFET

Features

  • Package.
  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • R.

📥 Download Datasheet

Datasheet preview – C3M0045065K

Datasheet Details

Part number C3M0045065K
Manufacturer Cree
File Size 1.05 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0045065K Datasheet
Additional preview pages of the C3M0045065K datasheet.

📁 Similar Datasheet

Other Datasheets by Cree

Full PDF Text Transcription

Click to expand full text
VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • EV chargers • Server & Telecom PSU • UPS • Solar inverters • SMPS • DC/DC converters Part Number C3M0045065K Drain (P
Published: |