900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cree

C4D02120E Datasheet Preview

C4D02120E Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

C4D02120E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.2kV Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Solar Inverters
Power Factor Correction
Package
TO-252-2
PIN 1
PIN 2
Part Number
C4D02120E
VRRM = 1200 V
IF (TC=135˚C) = 7 A
Qc = 12 nC
CASE
Package
TO-252-2
Marking
C4D02120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
IF Maximum DC Current
IFRM
IFSM
IF,Max
Ptot
TJ
Tstg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge
Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction Range
Storage Temperature Range
1200
1300
1200
9
4.5
2
14.4
10
18.8
16.4
200
160
51.7
22.4
-55 to
+175
-55 to
+135
V
V
V
A TTTCCC===211536˚52C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100msm,s,PuPluslese
W TTCC==2151˚0C˚C
˚C
˚C
1 C4D02120E Rev. C
Note
Free Datasheet http://www.nDatasheet.com




Cree

C4D02120E Datasheet Preview

C4D02120E Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.4 1.8
1.9 3
V
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
40 150
μA
VVRR
=
=
1200
1200
VV TTJJ==2157°5C°C
QC Total Capacitive Charge
11
nC
VdiR/d=t
800 V,
= 200
IAF/=μs2A
TJ = 25°C
C Total Capacitance
167
11
8
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-252 Package Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Typical Performance
4
3.5 TTTJJJ===-275555°°°CCC
TJ =125°C
3 TJ =175°C
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3
VF (V)
Figure 1. Forward Characteristics
3.5
600
500
400
300
200
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
100
0
0
500 VR (V)1000
1500
Figure 2. Reverse Characteristics
2000
2 C4D02120E Rev. C
Free Datasheet http://www.nDatasheet.com


Part Number C4D02120E
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
PDF Download

C4D02120E Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 C4D02120A Silicon Carbide Schottky Diode
Cree
2 C4D02120E Silicon Carbide Schottky Diode
Cree





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy