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C4D05120E Datasheet Preview

C4D05120E Datasheet

Silicon Carbide Schottky Diode

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C4D05120E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
LED Lighting Power Supplies
AC/DC converters
Package
VRRM
=
IF (TC=135˚C) =
Qc =
1200 V
 9.5 A
27 nC
TO-252-2
PIN 1
PIN 2
CASE
Part Number
C4D05120E
Package
TO-252-2
Marking
C4D05120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value
TJ , Tstg Operating Junction and Storage Temperature
1200
1300
1200
19
9.5
5
26
18
46
36
400
320
100
43
200
10.6
6.5
-55 to
+175
V
V
V
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=161˚C
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-960V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
1 C4D05120E Rev. F, 01-2017
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4




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C4D05120E Datasheet Preview

C4D05120E Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.4 1.8
1.9 3
20 150
40 300
27
390
27
20
V
IF = 5 A TJ=25°C
IF = 5 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 5A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
8.0
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.5
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
10
9 TJ=-55°C
8 TTTTJJJJ====27115527°°55CC°°CC
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VF (V)
Figure 1. Forward Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
500 1000
VR (VVol)tage (V)
1500
Figure 2. Reverse Characteristics
2000
2 C4D05120E Rev. F, 01-2017


Part Number C4D05120E
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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