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C4D08120E - Silicon Carbide Schottky Diode

Features

  • Package.
  • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits.
  • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without The.

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Full PDF Text Transcription

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C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package • • • • • • 1.
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