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C4D10120D Datasheet Preview

C4D10120D Datasheet

Silicon Carbide Schottky Diode

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C4D10120D
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Package
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
TO-247-3
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
C4D10120D
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM = 1200 V
IF (TC=135˚C) = 18 A**
Qc = 54 nC**
Package
TO-247-3
Marking
C4D10120
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
VR
IF
IFRM
IFSM
Ptot
Tc
TJ
Tstg
Surge Peak Reverse Voltage
1300
DC Peak Reverse Voltage
1200
Maximum DC Current(Per Leg/Device)
19/38
9/18
5/10
Repetitive Peak Forward Surge Current
26*
18*
Non-Repetitive Forward Surge Current
46*
36*
Power Dissipation(Per Leg/Device)
93/187
40/81
Maximum Case Temperature
135
Operating Junction Range
Storage Temperature Range
-55 to
+175
-55 to
+135
V
V
A TTTCCC===211536˚50C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
W TTCC==2151˚0C˚C
˚C
˚C
˚C
TO-247 Mounting Torque
* Per Leg, ** Per Device
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
1 C4D10120D Rev. D
Free Datasheet http://www.nDatasheet.com




Cree

C4D10120D Datasheet Preview

C4D10120D Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics (Per Leg)
Symbol Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.4
1.9
20
40
27
390
27
20
Max.
1.8
3
150
300
Unit
V
μA
nC
pF
Test Conditions
IIFF
=
=
5
5
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VdiR/d=t
800 V,
= 200
IAF/=μs5A
TJ = 25°C
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
* Per Leg, ** Per Device
Typ.
1.6*
0.8**
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance (Per Leg)
10
9
8
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3
VVolFta(geV(V))
Figure 1. Forward Characteristics
3.5
1000
900
800
700
600
500
400
300
200
100
0
0
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
500 1000
VR (VVol)tage (V)
1500
Figure 2. Reverse Characteristics
2000
2 C4D10120D Rev. D
Free Datasheet http://www.nDatasheet.com


Part Number C4D10120D
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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