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C4D40120D Datasheet Preview

C4D40120D Datasheet

Silicon Carbide Schottky Diode

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C4D40120D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
T O-247-3
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C4D40120D
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
=
IF (TC=135˚C)  =
Qc =
1200 V
   54A**
198nC**
Package
TO-247-3
Marking
C4D40120
Test Conditions
Note
VRRM
VRSM
VR
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
Continuous Forward Current
(Per Leg/Device)
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation (Per Leg/Device)
Diode dV/dt ruggedness
∫i2dt
i2t value
TJ Operating Junction Range
Tstg Storage Temperature Range
TO-247 Mounting Torque
* Per Leg, ** Per Device
1200
V
1300
V
1200
56.5/113
27/54
20/40
91*
61*
130*
110*
1150*
950*
266/532
114/228
200
84.5*
60.5*
-55 to
+175
-55 to
+135
1
8.8
V
A
A
A
A
W
V/ns
A2s
˚C
TC=25˚C
TC=135˚C
TC=150˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
VR=0-960V
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C4D40120D Rev. G, 09-2016




Cree

C4D40120D Datasheet Preview

C4D40120D Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.2
35
65
99
1500
93
67
1.8
3
200
400
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 20A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
28
μJ VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
0.29**
0.57*
Unit
°C/W
Note
Fig. 9
Typical Performance (Per Leg)
40
35
30
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
25
20
15
10
5
0
0123
VF (V)
Figure 1. Forward Characteristics
4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
500 1000
VR (V)
1500
Figure 2. Reverse Characteristics
2 C4D40120D Rev. G, 09-2016


Part Number C4D40120D
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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