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CCS020M12CM2 Datasheet Preview

CCS020M12CM2 Datasheet

Silicon Carbide Six-Pack (Three Phase) Module

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CCS020M12CM2
1.2kV, 80 mΩ Silicon Carbide
Six-Pack (Three Phase) Module
C2M MOSFET and Z-Rec® Diode
VDS
Esw, Total @ 20A, 150 ˚C
RDS(on)
1.2 kV
0.48 mJ
80 mΩ
Features
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Ease of Paralleling
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost
Applications
Solar Inverter
3-Phase PFC
Regen Drive
UPS and SMPS
Motor Drive
Package
Part Number
CCS020M12CM2
Package
Six-Pack
Marking
CCS020M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous MOSFET Drain Current
ID(pulse)
Pulsed Drain Current
IF Continuous Diode Forward Current
TJmax
Junction Temperature
TC ,TSTG
Visol
Case and Storage Temperature Range
Case Isolation Voltage
LStray
Stray Inductance
PD Power Dissipation
1.2
-10/+25
-5/20
29.5
20
80
46
27
-40 to +150
kV
V Absolute maximum values
V Recommended operational values
A VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
A Pulse width tp limited by TJ(max)
VGS = -5 V, TC = 25 ˚C
A
VGS = -5 V, TC = 90 ˚C
˚C
Fig. 25
-40 to +125 ˚C
4.5 kV AC, 50 Hz , 1 min
30
nH
Measured between terminals 25, 26 and
27, 28
167
W TC = 25 ˚C, TJ = 150 ˚C
Fig. 26
Subject to change without notice.
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CCS020M12CM2 Datasheet Preview

CCS020M12CM2 Datasheet

Silicon Carbide Six-Pack (Three Phase) Module

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Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS Drain - Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IDSS Zero Gate Voltage Drain Current
1.2
1.7 2.2
1.6
kV VGS, = 0 V, ID = 100 µA
VDS = 10 V, ID = 1 mA
V Fig. 7
VDS = 10 V, ID = 1 mA, TJ = 150 ˚C
1
100
μA VDS = 1.2 kV, VGS = 0V
10
250
μA VDS = 1.2 kV, VGS = 0V,TJ = 150 ˚C
IGSS Gate-Source Leakage Current
RDS(on) On State Resistance
gfs Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
1
80
145
9.8
8.5
900
181
5.9
250
98
208
nA
mΩ
S
VGS = 20 V, VDS = 0V
VGS = 20 V, IDS = 20 A
VGS = 20 V, IDS = 20 A, TJ = 150 ˚C
VDS = 20 V, IDS = 20 A
VDS = 20 V, ID = 20 A, TJ = 150 ˚C
Fig.
4-6
Fig. 8
pF
VDS = 800 V, f = 1 MHz,
VAC = 25 mV
Fig.
16,17
Eon T u r n - O n S w i t c h in g E n e r g y
EOff T u r n - O f f S w it c h in g E n e r g y
0.41
0.07
mJ
VDD = 800 V, VGS = -5V/+20V
ID = 20 A, RG(ext) = 2.5 Ω
Load = 412 μH, TJ = 150 ˚C
mJ Note: IEC 60747-8-4 Definitions
Fig. 22
RG (int)
QGS
QGD
QG
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
3.8
16.1
20.7
61.5
Ω f = 1 MHz, VAC = 25 mV
nC
VDD= 800 V, VGS = -5V/+20V,
ID= 20 A, Per JEDEC24 pg 27
Fig. 15
td(on)
tr(on)
td(off)
tf(off)
VSD
Turn-on delay time
VSD fall time 90% to 10%
Turn-off delay time
VSD rise time 10% to 90%
Diode Forward Voltage
QC Total Capacitive Charge
10
14
22.4
53
1.5
1.8
0.27
ns VDD = 800V, VGS = -5/+20V,
ns ID = 20 A, RG(ext) = 2.5 Ω,
ns
Timing relative to VDS
Note: IEC 60747-8-4, pg 83
ns Resistive load
1.7 V IF = 20 A, VGS = 0, TJ = 25 ˚C
2.3 IF = 20 A, VGS = 0, TJ = 150 ˚C
μC
ISD = 20 A, VDS = 800V
di/dt = 1500 A/μs, VGS = -5V
Fig. 24
Fig. 10
Fig. 11
Thermal Characteristics
Symbol
Parameter
RthJCM
RthJCD
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Additional Module Data
Symbol
W Weight
M Mounting Torque
Clearance Distance
Condition
Creepage Distance
Min.
Typ.
0.7
0.8
Max. Unit
0.75
0.85
˚C/W
Max.
180
5.0
14.09
14.11
17.46
Unit
g
Nm
mm
mm
mm
Test Conditions
Note
Fig. 27
Fig. 28
Test Condition
To Heatsink and terminals
Terminal to terminal
Terminal to terminal
Terminal to baseplate
2 CCS020M12CM2,Rev. -


Part Number CCS020M12CM2
Description Silicon Carbide Six-Pack (Three Phase) Module
Maker Cree
Total Page 10 Pages
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