logo

CGH35015F Datasheet, Cree

CGH35015F hemt equivalent, gan hemt.

CGH35015F Avg. rating / M : 1.0 rating-13

datasheet Download

CGH35015F Datasheet

Features and benefits


*
*
*
*
* ch 2007 Rev 1.6
  – Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W PO.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9.

Image gallery

CGH35015F Page 1 CGH35015F Page 2 CGH35015F Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts