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CMF20120D Datasheet Preview

CMF20120D Datasheet

Silicon Carbide Power MOSFET

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CMF20120D-Silicon Carbide Power MOSFET
VDS
1200 V
Z-FeTTM MOSFET
ID(MAX)
42 A
N-Channel Enhancement Mode RDS(o n) 80m
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Package
TO-247-3
Part Number
CMF20120D
Package
TO-247-3
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
ID Continuous Drain Current
IDpulse Pulsed Drain Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
42 A VGS@20V, TC = 25˚C
24 VGS@20V, TC = 100˚C
90 A Pulse width tP limited by Tjmax
TC = 25˚C
2.2
J
ID = 20A, VDD = 50 V,
L = 9.5 mH
1.5 J tAR limited by Tjmax
Fig. 10
Fig. 15
IAR Repetitive Avalanche Current
20 A ID = 20A, VDD = 50 V, L = 3 mH
tAR limited by Tjmax
VGS Gate Source Voltage
-5/+25 V
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
215
-55 to
+135
260
1
8.8
W TC=25˚C
˚C
Fig. 9
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 CMF20120D Rev. D
Free Datasheet http://www.nDatasheet.com




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CMF20120D Datasheet Preview

CMF20120D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
1200
2.65
3.2
2.0
2.45
1
10
80
95
7.9
7.4
4
4.8
100
250
0.25
100
120
V
V
V
μA
μA
m
S
VGS = 0V, ID = 100μA
VDS = VGS, ID = 1mA
VDS = VGS, ID = 10mA
VDS = VGS, ID = 1mA, TJ = 135ºC
VDS = VGS, ID = 10mA, TJ = 135ºC
VDS = 1200V, VGS = 0V
VDS = 1200V, VGS = 0V, TJ = 135ºC
VGS = 20V, VDS = 0V
VGS = 20V, ID = 20A
VGS = 20V, ID = 20A, TJ = 135ºC
VDS= 20V, IDS= 20A
VDS= 20V, IDS= 20A, TJ = 135ºC
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Eoss Coss Stored Energy
1915
120
13
62
VGS = 0V
pF VDS = 800V
f = 1MHz
μJ VAC = 25mV
td(on)v
tfv
td(off)v
trv
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
13 VDD = 800V, VGS = 0/20V
24 ID = 20A
40 ns RG(ext) = 2.5Ω, RL = 40Ω
38 Timing relative to VDS
RG Internal Gate Resistance
5 Ω f = 1MHz, VAC = 25mV
Note
Fig. 11
Fig. 3
Fig. 6
Fig. 13
Fig. 14
Fig. 17
Built-in SiC Body Diode Characteristics
Symbol Parameter
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Thermal Characteristics
Typ.
3.5
3.1
220
142
2.3
Max.
Unit
V
ns
nC
A
Test Conditions
VGS = -5V, IF=10A, TJ = 25ºC
VGS = -2V, IF=10A, TJ = 25ºC
VGS = -5V, IF=20A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
RθCS Case to Sink, w/ Thermal Compound
RθJA Thermal Resistance From Junction to Ambient
Gate Charge Characteristics
Typ.
0.44
0.25
Symbol Parameter
Qgs Gate to Source Charge
Qgd Gate to Drain Charge
Qg Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
0.51
40
Unit
K/W
Test Conditions
Max.
Unit
Test Conditions
VDD = 800V, VGS = 0/20V
nC ID =20A
Per JEDEC24 pg 27
Note
Fig. 22
Note
Fig. 7
Note
Fig.
12
2 CMF20120D Rev. D
Free Datasheet http://www.nDatasheet.com


Part Number CMF20120D
Description Silicon Carbide Power MOSFET
Maker Cree
Total Page 8 Pages
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