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CPW5-1200-Z050B Datasheet Preview

CPW5-1200-Z050B Datasheet

Silicon Carbide Schottky Diode Chip

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CPW5-1200-Z050B
Silicon Carbide Schottky Diode Chip
Z-RecTM Rectifier
Features
Chip Outline
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on VF
VRRM = 1200 V
IF = 50 A
Qc = 170 nC
Part Number
CPW5-1200-Z050B
Die Size
4.9 x 4.9 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1200 V
VR DC Peak Blocking Voltage
1300 V
IF Maximum DC Current
50 A TJ=150˚C
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
TProc
Maximum Procesing Temperature
325
˚C 10 min Maximum
Note
1
Note:
1. Assumes θJC Thermal Resistance < 0.78˚C/W and TC = 25 ˚C
Subject to change without notice.
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Free Datasheet http://www.nDatasheet.com




Cree

CPW5-1200-Z050B Datasheet Preview

CPW5-1200-Z050B Datasheet

Silicon Carbide Schottky Diode Chip

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VF DC Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Typ.
1.6
2.3
100
483
170
3380
320
230
Max.
1.8
2.7
515
1920
Unit
V
μA
nC
pF
Test Conditions
IIFF
=
=
50
50
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VR = 400 V, TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note
Fig 1
Fig 2
Fig 4
Fig 3
Mechanical Parameters
Parameter
Die Size
Anode Pad opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
4.9 x 4.9
3.8 x 3.8
380 ± 50
100
4
1.8
Polyimide
Unit
mm
mm
μm
mm
μm
μm
2 CPW5-1200-Z050B Rev. -
Free Datasheet http://www.nDatasheet.com


Part Number CPW5-1200-Z050B
Description Silicon Carbide Schottky Diode Chip
Maker Cree
Total Page 4 Pages
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