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CSD01060 Datasheet Preview

CSD01060 Datasheet

Silicon Carbide Schottky Diode

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CSD01060
Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Rectifier Heat Sink
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical
Motor Drives
PFC
Pout
:
100W-200W
- Typical Power : 0.25HP-0.5HP
Package
VRRM = 600 V
IF (TC=135˚C) = 2 A
Qc = 3.3 nC
TO-252-2
PIN 1
PIN 2
TO-220-2
CASE
Part Number
CSD01060A
CSD01060E
Package
TO-220-2
TO-252-2
Marking
CSD01060
CSD01060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
4
2
1
7
5.5
9
32
21.4
7.1
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211535˚58C˚˚CC
A TTCC==2152˚5C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaeve
A TC=25˚C, tP=1.5 ms, Half Sine Wave
A TC=25˚C, tP=10 µs, Pulse
W TTCC==2152˚5C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
1 CSD01060 Rev. P
Free Datasheet http://www.nDatasheet.com




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CSD01060 Datasheet Preview

CSD01060 Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
1.6
2.0
1.8
2.4
V
IIFF
=
=
1
1
A
A
TTJJ==2157°5C°C
IR Reverse Current
20
40
100
500
μA
VVRR
=
=
600
600
V
V
TTJJ==2155°0C°C
QC Total Capacitive Charge
3.3
nC
VdiR/d=t
600 V,
= 500
IAF/=μs1
A
TJ = 25°C
C Total Capacitance
80
11
8.5
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
RθJA Thermal Resistance from Junction to Ambient
Typ.
7
60
Unit
°C/W
˚C/W
Note
Typical Performance
2.0
1.8
1.6
TTTTJJJJ
=
=
=
=
25°C
50°C
100°C
150°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF Forward Voltage (V)
Figure 1. Forward Characteristics
55500
TJ = 2T5J 2°5 °CC
TJ
=
1T0J 1000°° CC
TJ 200 ° C
44400 TTJJ==220C0°C
TJ = 100°C
TJ = 200°C
33300
22200
111000
000
000
222000000VRVRRevRVeeR44rv4Rs000eee000vresVresoelVVtaoolglta6t6e6ga000eg00(0(VeV))(V) 888000000
110100000000
Figure 2. Reverse Characteristics
2 CSD01060 Rev. P
Free Datasheet http://www.nDatasheet.com


Part Number CSD01060
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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