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PFM21030 - 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

Features

  • 28 mil diameter on 3.

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Datasheet Details

Part number PFM21030
Manufacturer Cree Research
File Size 453.30 KB
Description 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
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w t e e SPECIFICATION PFM21030 h S MHz, 30W, 2-Stage Power Module 2110-2170 a at Enhancement-Mode Lateral MOSFETs D . w versatile UMTS module provides excellent linearity and efficiency in wThis a low-cost surface mount package. The PFM21030 includes two stages 4U m o .c PRELIMINARY Package Type: Surface Mount PN: PFM21030SM of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much higher (and simpler to realize) than for unmatched Si LDMOS transistors of similar performance.
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