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CY7C009V - 128K x 8 Dual-Port Static RAM

Key Features

  • True dual-ported memory cells which allow simultaneous access of the same memory location.
  • 128K × 8 organization (CY7C009).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 15/20/25 ns.
  • Low operating power.
  • Active: ICC = 115 mA (typical).
  • Standby: ISB3 = 10 A (typical).
  • Fully asynchronous operation.
  • Automatic power-down.
  • Expandable data bus to 16 bits or more using Master/Slave chip select when using more than one device.
  • On-c.

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Full PDF Text Transcription for CY7C009V (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CY7C009V. For precise diagrams, and layout, please refer to the original PDF.

CY7C008V CY7C018V CY7C009V CY7C019V 3.3 V, 128K × 8 Dual-Port Static RAM CY7C009V 3.3 V, 128K × 8 Dual-Port Static RAM 3.3 V, 128K × 8 Dual-Port Static RAM Features ■ Tru...

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al-Port Static RAM 3.3 V, 128K × 8 Dual-Port Static RAM Features ■ True dual-ported memory cells which allow simultaneous access of the same memory location ■ 128K × 8 organization (CY7C009) ■ 0.

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