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CY7C018V - 3.3V 64K/128K x 8/9 Dual-Port Static RAM

Download the CY7C018V datasheet PDF. This datasheet also covers the CY7C008V variant, as both devices belong to the same 3.3v 64k/128k x 8/9 dual-port static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • True Dual-Ported memory cells which allow simultaneous access of the same memory location.
  • 64K x 8 organization (CY7C008).
  • 128K x 8 organization (CY7C009).
  • 64K x 9 organization (CY7C018).
  • 128K x 9 organization (CY7C019).
  • 0.35-micron CMOS for optimum speed/power.
  • High-speed access: 15/20/25 ns.
  • Low operating power.
  • Active: ICC = 115 mA (typical).
  • Standby: ISB3 = 10 µA (typical) Logic Block Diagram R/WL CE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C008V-Cypress.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for CY7C018V (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CY7C018V. For precise diagrams, and layout, please refer to the original PDF.

25/0251 Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 64K x 8 organization (CY7C008) • 128K x 8 organization (CY7...

View more extracted text
location • 64K x 8 organization (CY7C008) • 128K x 8 organization (CY7C009) • 64K x 9 organization (CY7C018) • 128K x 9 organization (CY7C019) • 0.35-micron CMOS for optimum speed/power • High-speed access: 15/20/25 ns • Low operating power — Active: ICC = 115 mA (typical) — Standby: ISB3 = 10 µA (typical) Logic Block Diagram R/WL CE0L CE1L OEL CEL CY7C008V/009V CY7C018V/019V 3.