Cypress Semiconductor S29GL512N
the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended migration paths.| Part No. | S29GL512N |
|---|---|
| Datasheet | S29GL512N Download |
| Manufacturer |  Cypress Semiconductor |
| Description | 3.0V single power flash memory |
| Buy | Stock & Price |
S29GL512N S29GL256N S29GL128N 512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S, and S29GL512T supersede Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information. Not Recommended for New Design Distinctive Characteristics Architectural Advantages
● Single Power Supply Operation – 3 volt read, erase, and program operations
● Enhanced VersatileI/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
● Manufactured on 110 nm MirrorBit Process Technology
● Secured Silicon Sector Region – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial N
● Single Power Supply Operation – 3 volt read, erase, and program operations
● Enhanced VersatileI/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
● Manufactured on 110 nm MirrorBit Process Technology
● Secured Silicon Sector Region – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial N
