CY14B101L Datasheet PDF - Cypress Semiconductor 1-Mbit (128K x 8) nvSRAM Specs

CY14B101L - 1-Mbit (128K x 8) nvSRAM

Datasheet Summary

Description

The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell.

The embedded nonvolatile elements incorporate QuantumTrap technology producing, the world’s most reliable nonvolatile memory.

Features

25 ns, 35 ns, and 45 ns access times.
“Hands-off” automatic STORE on power down with only a small capacitor.
STORE to QuantumTrapTM nonvolatile elements is initiated by software, device pin, or AutostoreTM on power down.
RECALL to SRAM initiated by software or power up www. DataSheet4U. com.
Infinite READ, WRITE, and RECALL cycles.
10 mA typical ICC at 200 ns cycle time.
200,000 STORE cycles to quantum trap.
20-year data rete.

Datasheet Details

Part number	CY14B101L
Manufacturer	Cypress Semiconductor
File Size	1.22 MB
Description	1-Mbit (128K x 8) nvSRAM
Datasheet	CY14B101L Datasheet
Additional preview pages of the CY14B101L datasheet.

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Full PDF Text Transcription

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PRELIMINARY CY14B101L 1-Mbit (128K x 8) nvSRAM Features • 25 ns, 35 ns, and 45 ns access times • “Hands-off” automatic STORE on power down with only a small capacitor • STORE to QuantumTrapTM nonvolatile elements is initiated by software, device pin, or AutostoreTM on power down • RECALL to SRAM initiated by software or power up www.DataSheet4U.com • Infinite READ, WRITE, and RECALL cycles • 10 mA typical ICC at 200 ns cycle time • 200,000 STORE cycles to quantum trap • 20-year data retention @ 55°C • Single 3V operation +20%, –10% • Commercial and industrial temperature • SOIC and SSOP packages • RoHS compliance Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell.

Published: Nov 6, 2008 |