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CY14B101NA Datasheet 1-Mbit nvSRAM

Manufacturer: Cypress (now Infineon)

Download the CY14B101NA datasheet PDF. This datasheet also includes the CY14B101LA variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B101LA-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The Cypress CY14B101LA

Overview

CY14B101LA CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM 1-Mbit (128 K × 8/64 K × 16).

Key Features

  • 20 ns, 25 ns, and 45 ns access times.
  • Internally organized as 128 K × 8 (CY14B101LA) or 64 K × 16 (CY14B101NA).
  • Hands off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • Infinite read, write, and RECALL cycles.
  • 1 million STORE cycles to QuantumTrap.
  • 20 year data retention.
  • Single 3 V +20.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM
CY14B101LA 1-Mbit nvSRAM
CY14B101MA 1-Mbit nvSRAM
CY14B101PA 1-Mbit (128K x 8) Serial (SPI) nvSRAM
CY14B101Q1 1-Mbit (128K x 8) Serial SPI nvSRAM
CY14B101Q2 1-Mbit (128K x 8) Serial SPI nvSRAM