CY14B256L Datasheet PDF - Cypress Semiconductor 256-Kbit (32K x 8) nvSRAM Specs

CY14B256L - 256-Kbit (32K x 8) nvSRAM

Datasheet Summary

Description

The Cypress CY14B256L is a fast static RAM with a nonvolatile element in each memory cell.

The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory.

Features

25 ns, 35 ns, and 45 ns access times.
“Hands-off” automatic STORE on power down with only a small capacitor.
STORE to QuantumTrap™ nonvolatile elements is initiated by software, device pin, or AutoStore™ on power down.
RECALL to SRAM initiated by software or power up.
Infinite READ, WRITE, and RECALL cycles.
10 mA typical ICC at 200 ns cycle time.
200,000 STORE cycles to QuantumTrap.
20-year data retention @ 55°C.

Datasheet Details

Part number	CY14B256L
Manufacturer	Cypress Semiconductor
File Size	1.22 MB
Description	256-Kbit (32K x 8) nvSRAM
Datasheet	CY14B256L Datasheet
Additional preview pages of the CY14B256L datasheet.

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Full PDF Text Transcription

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PRELIMINARY CY14B256L 256-Kbit (32K x 8) nvSRAM Features • 25 ns, 35 ns, and 45 ns access times • “Hands-off” automatic STORE on power down with only a small capacitor • STORE to QuantumTrap™ nonvolatile elements is initiated by software, device pin, or AutoStore™ on power down • RECALL to SRAM initiated by software or power up • Infinite READ, WRITE, and RECALL cycles • 10 mA typical ICC at 200 ns cycle time • 200,000 STORE cycles to QuantumTrap • 20-year data retention @ 55°C • Single 3V operation with tolerance of +15%, –10% • Commercial and industrial temperature • SOIC and SSOP packages • RoHS compliance Functional Description The Cypress CY14B256L is a fast static RAM with a nonvolatile element in each memory cell.

Published: Jan 11, 2010 |