CY14B256L Datasheet | Cypress

Features - 25 ns, 35 ns, and 45 ns access times - “Hands-off” automatic STORE on power down with only a small capacitor - STORE to Quantum Trap™ nonvolatile elements is initiated by software, device pin, or Auto Store™ on power down - RECALL to SRAM initiated by software or power up - Infinite READ, WRITE, and RECALL cycles - 10 m A typical ICC at 200 ns cycle time - 200,000 STORE cycles to Quantum Trap - 20-year data retention @ 55°C - Single 3V operation with tolerance of +15%, - 10% - mercial and industrial temperature - SOIC and SSOP packages - Ro HS pliance Functional Description The Cypress CY14B256L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate Quantum Trap technology producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles while independent, nonvolatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. The STORE and RECALL operations are also available under software control. Logic Block Diagram Quantum Trap 512 X 512 A5 A6 A7 A8 A9 A 11 A 12 A 13 A 14 .. VCAP STORE POWER CONTROL STORE/ RECALL CONTROL ROW DECODER STATIC RAM ARRAY 512 X 512 RECALL SOFTWARE DETECT COLUMN IO A13 - A 0 DQ 0 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 INPUT BUFFERS DQ 1 COLUMN DEC A 0 A 1 A 2 A 3 A 4 A 10 CE WE Cypress Semiconductor Corporation Document #: 001-06422 Rev. - E - 198 Champion...