CY14C101J
Features
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CY14C101J CY14B101J, CY14E101J 2
1-Mbit nonvolatile static random access memory (nv SRAM)
- Internally organized as 128 K × 8
- STORE to Quantum Trap nonvolatile elements initiated automatically on power-down (Auto Store) or by using I2C mand (Software STORE) or HSB pin (Hardware STORE)
- RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C mand (Software RECALL)
- Automatic STORE on power-down with a small capacitor (except for CY14X101J1) High reliability
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- Industry standard configurations
- Operating voltages:
- CY14C101J: VCC = 2.4 V to 2.6 V
- CY14B101J: VCC = 2.7 V to 3.6 V
- CY14E101J: VCC = 4.5 V to 5.5 V
- Industrial temperature
- 8- and 16-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (Ro HS) pliant
Overview
The Cypress CY14C101J/CY14B101J/CY14E101J bines a 1-Mbit nv SRAM[1] with a nonvolatile element in each memory cell. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile...
