CY14C512J Datasheet | Cypress

Features - - 512-Kbit nonvolatile static random access memory (nv SRAM) - Internally organized as 64 K × 8 - STORE to Quantum Trap nonvolatile elements initiated automatically on power-down (Auto Store) or by using I2C mand (Software STORE) or HSB pin (Hardware STORE) - RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C mand (Software RECALL) - Automatic STORE on power-down with a small capacitor (except for CY14X512J1) - High reliability Infinite read, write, and RECALL cycles 1 million STORE cycles to Quantum Trap - Data retention: 20 years at 85 C 2 - High speed I C interface - Industry standard 100 k Hz and 400 k Hz speed - Fast-mode Plus: 1 MHz speed - High speed: 3.4 MHz - Zero cycle delay reads and writes - Write protection - Hardware protection using Write Protect (WP) pin - Software block protection for one-quarter, one-half, or entire array 2 - I C access to special functions - Nonvolatile STORE/RECALL - 8 byte serial number - Manufacturer ID and Product ID - Sleep mode - Low power consumption - Average active current of 1 m A at 3.4 MHz operation - Average standby mode current of 150 µA - Sleep mode current of 8 µA - - Industry standard configurations - Operating voltages: - CY14C512J: VCC = 2.4 V to 2.6 V - CY14B512J: VCC = 2.7 V to 3.6 V - CY14E512J: VCC = 4.5 V to 5.5 V - Industrial temperature - 8- and 16-pin small outline integrated circuit (SOIC) package - Restriction of hazardous substances (Ro HS) pliant Overview The Cypress CY14C512J/CY14B512J/CY14E512J bines a 512-Kbit nv SRAM[1] with a nonvolatile element in each memory cell. The memory is organized as 64 K words of 8 bits each. The embedded nonvolatile elements incorporate the Quantum Trap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the Quantum Trap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at...