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CY14E116L - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

This page provides the datasheet information for the CY14E116L, a member of the CY14B116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM family.

Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns, 30-ns and 45-ns access times.
  • Internally organized as 2048K × 8 (CY14X116L), 1024K × 16 (CY14X116N), 512K × 32 (CY14X116S).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and.

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Datasheet preview – CY14E116L

Datasheet Details

Part number CY14E116L
Manufacturer Cypress (now Infineon)
File Size 1.26 MB
Description 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
Datasheet download datasheet CY14E116L Datasheet
Additional preview pages of the CY14E116L datasheet.

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Other Datasheets by Cypress Semiconductor
  • CY14E116N - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
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Full PDF Text Transcription

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CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048K × 8 (CY14X116L), 1024K × 16 (CY14X116N), 512K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐
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