CY14V256LA Datasheet | Cypress

Features - 35 ns access time - Internally organized as 32K × 8 - Hands off automatic STORE on power down with only a small capacitor - STORE to Quantum Trap nonvolatile elements initiated by software, device pin, or Auto Store on power down - RECALL to SRAM initiated by software or power up - Infinite read, write, and recall cycles - 1 million STORE cycles to Quantum Trap - 20 year data retention - Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V - Industrial temperature - 48-ball fine-pitch ball grid array (FBGA) package - Pb-free and restriction of hazardous substances (Ro HS) pliance Functional Description The Cypress CY14V256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32K bytes of 8 bits each. The embedded nonvolatile elements incorporate Quantum Trap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. For a plete list of related documentation, click here. Log Liocg Biclo Bclkoc Dkia Dgiraagmram A5 A6 A7 A8 A9 A 11 A 12 A 13 A 14 ROW DECODER Quantum Trap 512 X 512 STORE STATIC RAM ARRAY 512 X 512 RECALL DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 INPUT BUFFERS COLUMN I/O COLUMN DEC A0 A1 A2 A3 A4 A10 VCC VCCQ VCAP POWER CONTROL STORE/ RECALL CONTROL SOFTWARE DETECT - A14 A2 CE WE Cypress Semiconductor Corporation - 198 Champion Court Document Number: 001-76295 Rev. - E - San Jose, CA 95134-1709 - 408-943-2600 Revised February 9,...