CY15B102N - 2-Mbit (128K x 16) Automotive F-RAM Memory

Cypress Semiconductor

Datasheet Details

Part number	CY15B102N
Manufacturer	Cypress Semiconductor
File Size	430.86 KB
Description	2-Mbit (128K x 16) Automotive F-RAM Memory
Datasheet	CY15B102N-CypressSemiconductor.pdf

2-Mbit ferroelectric random access memory (F-RAM™) logically organized as 128K × 16.
Configurable as 256K × 8 using UB and LB.
High-endurance 100 trillion (1014) read/writes.
151-year data retention (see the Data Retention and Endurance table).
NoDelay™ writes.
Page-mode operation for 30-ns cycle time.
Advanced high-reliability ferroelectric process.
SRAM compatible.
Industry-standard 128K × 16 SRAM pinout.
60-ns access time, 90-ns cycle time.

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Published: Mar 14, 2017 |