CY15V102QN
Overview
- 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 ❐ Virtually unlimited endurance of 10 trillion (1013) read/write cycles ❐ 121-year data retention (see Data Retention and Endurance on page 19) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI) ❐ Up to 50 MHz frequency ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable (WRDI) instruction ❐ Software block protection for 1/4, 1/2, or entire array
- Device ID and Serial Number ❐ Device ID includes manufacturer ID and product ID ❐ Unique ID ❐ Serial Number
- Dedicated 256-byte special sector F-RAM ❐ Dedicated special sector write and read ❐ Stored content can survive up to 3 standard reflow soldering cycles
- Low-power consumption ❐ 3.7 mA (typ) active current at 40 MHz ❐ 2.7 µA (typ) standby current ❐ 1.1 µA (typ) Deep Power Down mode current ❐ 0.1 µA (typ) Hibernate mode current
- Low-voltage operation: ❐ CY15V102QN: VDD = 1.71 V to 1.89 V ❐ CY15B102QN: VDD = 1.8 V to 3.6 V
- Automotive operating temperature: -40 °C to +125 °C
- AEC-Q100 Grade 1 compliant
- 8-pin Small Outline Integrated Circuit (SOIC) package
