CY62147G18 Overview
CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.
CY62147G18 Key Features
- High speed: 45 ns/55 ns
- Ultra-low standby power
- Typical standby current: 3.5 A
- Maximum standby current: 8.7 A
- Embedded ECC for single-bit error correction[1, 2]
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Error indication (ERR) pin to indicate 1-bit error detection and correction
- Pb-free 48-ball VFBGA and 44-pin TSOP II packages