CY62147G18 Datasheet - Cypress Semiconductor

4-Mbit (256K words x 16 bit) Static RAM

CY62147G18 Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Embedded ECC for single-bit error correction[1, 2]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

* 1.0-V data retention

CY62147G18 General Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a.

CY62147G18 Datasheet (475.21 KB)

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CY62147G18

Manufacturer:

Cypress Semiconductor

File Size:

475.21 KB

Description:

4-mbit (256k words x 16 bit) static ram.
CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w.

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CY62147G18 4-Mbit 256K words bit Static RAM Cypress Semiconductor

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CY62147G18 Features

CY62147G18 General Description

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