CY62147GE30, CY62147G Datasheet - Cypress Semiconductor

CY62147GE30 4-Mbit (256K words x 16 bit) Static RAM

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a.

CY62147GE30 Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Embedded ECC for single-bit error correction[1, 2]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

* 1.0-V data retention

CY62147G-CypressSemiconductor.pdf

CY62147GE30 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY62147GE30, CY62147G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY62147GE30, CY62147G

Manufacturer:

Cypress Semiconductor

File Size:

475.21 KB

Description:

4-mbit (256k words x 16 bit) static ram.

Note:

This datasheet PDF includes multiple part numbers: CY62147GE30, CY62147G.
Please refer to the document for exact specifications by model.

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TAGS

CY62147GE30 CY62147G 4-Mbit 256K words bit Static RAM Cypress Semiconductor

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