CY62147GN Overview
CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.
CY62147GN Key Features
- High speed: 45 ns/55 ns
- Ultra-low standby power
- Typical standby current: 3.5 A
- Maximum standby current: 8.7 A
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Pb-free 48-ball VFBGA and 44-pin TSOP II packages