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Cypress Semiconductor Electronic Components Datasheet

CY7C1049 Datasheet

512K x 8 Static RAM

No Preview Available !

049
PRELIMINARY
CY7C1049
512K x 8 Static RAM
Features
• High speed
—t AA = 15 ns
• Low active power
— 1210 mW (max.)
• Low CMOS standby power (Commercial L version)
— 2.75 mW (max.)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
Functional Description
The CY7C1049 is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
Logic Block Diagram
is provided by an active LOW chip enable (CE), an active LOW
output enable (OE), and three-state drivers. Writing to the de-
vice is accomplished by taking chip enable (CE) and write en-
able (WE) inputs LOW. Data on the eight I/O pins (I/O0 through
I/O7) is then written into the location specified on the address
pins (A0 through A18).
Reading from the device is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing write en-
able (WE) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state w hen the de vice is de selected (C E
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049 is available in a standard 400-mil-wide 36-pin
SOJ package with center power and ground (revolutionary)
pinout.
Pin Configuration
SOJ
Top View
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
512K x 8
ARRAY
A8
A9
A10
CE
COLUMN
DECODER
WE
OE
Selection Guide
POWER
DOWN
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby
Current (mA)
Com’l
Com’l L
Ind’l
Military
Shaded areas contain advance information.
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
1049–1
A0
A1
A2
A3
A4
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE
30 I/O7
29 I/O6
28 GND
27 VCC
26 I/O5
25 I/O4
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
1049–2
7C1049-12
12
240
8
0.5
9
7C1049-15
15
220
8
0.5
9
7C1049-17
17
195
8
0.5
9
7C1049-20
20
185
8
0.5
9
10
7C1049-25
25
180
8
0.5
9
10
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 951 34 • 408-943-2600
Document #: 38-05063 Rev. **
Revised August 31, 2001
http://www.Datasheet4U.com


Cypress Semiconductor Electronic Components Datasheet

CY7C1049 Datasheet

512K x 8 Static RAM

No Preview Available !

PRELIMINARY
CY7C1049
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1] ................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics Over the Operating Range
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Military
Ambient
Temperature[2]
0°C to +70°C
–40°C to +85°C
–55°C to +125°C
VCC
4.5V–5.5V
Parameter
Description
Test Conditions
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA
VIH Input HIGH Voltage
VIL Input LOW Voltage[1]
IIX Input Load Current GND < VI < VCC
IOZ
Output Leakage
GND < VOUT < VCC,
Current
Output Disabled
ICC
VCC Operating
VCC = Max.,
Supply Current
f = fMAX = 1/tRC
ISB1 Automatic CE
Max. VCC, CE > VIH
Power-Down Current VIN > VIH or
—TTL Inputs
VIN < VIL, f = fMAX
ISB2 Automatic CE
Max. VCC,
Com’l
Power-Down Current CE > VCC – 0.3V,
—CMOS Inputs
VIN > VCC – 0.3V,
Com’l L
or VIN < 0.3V, f=0 Ind’l
Military
Shaded areas contain advance information.
Notes:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. TA is the “instant on” case temperature.
7C1049-12
Min. Max.
2.4
0.4
2.2 VCC
+ 0.3
–0.3 0.8
–1 +1
–1 +1
240
40
8
0.5
9
10
7C1049-15
Min. Max.
2.4
0.4
2.2 VCC
+ 0.3
–0.3 0.8
–1 +1
–1 +1
220
40
8
0.5
9
10
7C1049-17
Min. Max.
2.4
0.4
2.2 VCC
+ 0.3
–0.3 0.3
–1 +1
–1 +1
Unit
V
V
V
V
µA
µA
195 mA
40 mA
8 mA
0.5 mA
9 mA
10 mA
Document #: 38-05063 Rev. **
Page 2 of 10


Part Number CY7C1049
Description 512K x 8 Static RAM
Maker Cypress Semiconductor
Total Page 10 Pages
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