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Cypress Semiconductor Electronic Components Datasheet

CY7C107B Datasheet

1M x 1 Static RAM

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CY7C107B pdf
07B
CY7C107B
CY7C1007B
Features
• High speed
— tAA = 12 ns
• CMOS for optimum speed/power
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
Functional Description
The CY7C107B and CY7C1007B are high-performance
CMOS static RAMs organized as 1,048,576 words by 1 bit.
Easy memory expansion is provided by an active LOW Chip
Enable (CE) and three-state drivers. These devices have an
automatic power-down feature that reduces power consump-
tion by more than 65% when deselected.
1M x 1 Static RAM
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the input pin
(DIN) is written into the memory location specified on the ad-
dress pins (A0 through A19).
Reading from the devices is accomplished by taking Chip En-
able (CE) LOW while Write Enable (WE) remains HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the data output (DOUT)
pin.
The output pin (DOUT) is placed in a high-impedance state
when the device is deselected (CE HIGH) or during a write
operation (CE and WE LOW).
The CY7C107B is available in a standard 400-mil-wide SOJ;
the CY7C1007B is available in a standard 300-mil-wide SOJ.
Logic Block Diagram
INPUT BUFFER
A0
A1
A2
A3
A4 512x2048
A5 ARRAY
A6
A7
A8
COLUMN
DECODER
POWER
DOWN
DIN
DOUT
CE
WE
107B-1
Pin Configuration
SOJ
Top View
A10
A11
A12
A13
A14
A15
NC
A16
A17
A18
A19
DOUT
WE
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 A9
26 A8
25
24
A7
A6
23 A5
22
21
A4
NC
20 A3
19
18
A2
A1
17 A0
16 DIN
15 CE
107B-2
Selection Guide
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum CMOS Standby
Current SB2 (mA)
7C107B-12
7C1007B-12
12
90
2
7C107B-15
7C1007B-15
15
80
2
7C107B-20
7C1007B-20
20
75
2
7C107B-25
7C1007B-25
25
70
2
7C107B-35
7C1007B-35
35
60
2
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05030 Rev. **
Revised September 7, 2001


Cypress Semiconductor Electronic Components Datasheet

CY7C107B Datasheet

1M x 1 Static RAM

No Preview Available !

CY7C107B pdf
CY7C107B
CY7C1007B
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on VCC Relative to GND[1] .....−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................... −0.5V to VCC + 0.5V
DC Input Voltage[1].................................... −0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature[2]
0°C to +70°C
40°C to +85°C
VCC
5V ± 10%
5V ± 10%
Electrical Characteristics Over the Operating Range
7C107B-12
7C1007B-12
7C107B-15
7C1007B-15
Parameter
Description
Test Conditions
Min. Max. Min. Max.
VOH
Output HIGH
VCC = Min., IOH = 4.0 mA 2.4
Voltage
2.4
VOL
Output LOW
VCC = Min., IOL = 8.0 mA
Voltage
0.4
0.4
VIH Input HIGH
Voltage
2.2 VCC+ 2.2 VCC+
0.3 0.3
VIL
Input LOW
Voltage[1]
0.3 0.8 0.3 0.8
IIX Input Load Current GND < VI < VCC
IOZ
Output Leakage
GND < VI < VCC,
Current
Output Disabled
1 +1 1 +1
5 +5 5 +5
IOS
Output Short
Circuit Current[3]
VCC = Max., VOUT = GND
300
300
ICC
VCC Operating
VCC = Max.,
Supply Current
IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1
Automatic CE
Max. VCC, CE > VIH,
Power-Down
VIN >VIH or VIN < VIL,
CurrentTTL Inputs f = f MAX
ISB2
Automatic CE
Max. VCC,
Power-Down
CE > VCC 0.3V,
Current
VIN > VCC 0.3V or
CMOS Inputs
VIN < 0.3V, f = 0
90 80
20 20
22
Notes:
1. VIL (min.) = 2.0V for pulse durations of less than 20 ns.
2. TA is the Instant Oncase temperature.
3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
7C107B-20
7C1007B-20
Min. Max.
2.4
0.4
2.2
0.3
VCC+
0.3
0.8
1 +1
5 +5
300
75
20
2
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
Document #: 38-05030 Rev. **
Page 2 of 9


Part Number CY7C107B
Description 1M x 1 Static RAM
Maker Cypress Semiconductor
Total Page 9 Pages
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