CY7C1161KV18 Datasheet 18-Mbit QDR II SRAM Four-Word Burst Architecture

Manufacturer: Cypress (now Infineon)

Overview: CY7C1161KV18, CY7C1176KV18 CY7C1163KV18, CY7C1165KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.

Datasheet Details

Part number	CY7C1161KV18
Manufacturer	Cypress (now Infineon)
File Size	908.73 KB
Description	18-Mbit QDR II SRAM Four-Word Burst Architecture
Download	CY7C1161KV18 Download (PDF)

The CY7C1161KV18, CY7C1176KV18, CY7C1163KV18, and CY7C1165KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture.

Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array.

The read port has dedicated data outputs to support read operations and the write port has dedicated dat

Configurations With Read Cycle Latency of 2.5 cycles: CY7C1161KV18.
2 M x 8 CY7C1176KV18.
2 M x 9 CY7C1163KV18.
1 M x 18 CY7C1165KV18.
512 K x 36 Separate independent read and write data ports.
Supports concurrent transactions 550-MHz clock for high bandwidth Four-word burst for reducing address bus frequency Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.5 clock cycle latenc.

Part Number	Description
CY7C11611KV18	18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1161V18	(CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C11631KV18	18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1163KV18	18-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1163V18	(CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C11651KV18	18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1165KV18	18-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1165V18	(CY7C11xxV18) SRAM 4-Word Burst Architecture
CY7C1166V18	(CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1168KV18	18-Mbit DDR II+ SRAM Two-Word Burst Architecture