CY7C2264XV18, CY7C2262XV18 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture

Cypress Semiconductor

Description

CY7C2262XV18/CY7C2264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Two.

📥 Download Datasheet

CY7C2264XV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C2264XV18, CY7C2262XV18. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: CY7C2264XV18, CY7C2262XV18
Manufacturer: Cypress Semiconductor
File Size: 647.92 KB
Datasheet: CY7C2262XV18-CypressSemiconductor.pdf
Description: 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture
Note: This datasheet PDF includes multiple part numbers: CY7C2264XV18, CY7C2262XV18.
Please refer to the document for exact specifications by model.

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 450 MHz clock for high bandwidth
* 2-word burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz

CY7C2264XV18 Distributors

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CY7C2262XV18 36-Mbit QDR II + Xtreme SRAM Two-Word Burst Architecture Cypress Semiconductor

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