CY7C2265KV18, CY7C2263KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture

Cypress Semiconductor

Description

CY7C2263KV18/CY7C2265KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ SRAM 4-Word Burst Arc.

📥 Download Datasheet

CY7C2265KV18 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C2265KV18, CY7C2263KV18. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: CY7C2265KV18, CY7C2263KV18
Manufacturer: Cypress Semiconductor
File Size: 631.21 KB
Datasheet: CY7C2263KV18-CypressSemiconductor.pdf
Description: 36-Mbit QDR II+ SRAM Four-Word Burst Architecture
Note: This datasheet PDF includes multiple part numbers: CY7C2265KV18, CY7C2263KV18.
Please refer to the document for exact specifications by model.

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 550 MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MH

CY7C2265KV18 Distributors

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CY7C2263KV18 36-Mbit QDR II + SRAM Four-Word Burst Architecture Cypress Semiconductor

Cypress Semiconductor CY7C2265KV18-like datasheet