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Cypress Semiconductor Electronic Components Datasheet

FM1808B Datasheet

256-Kbit (32 K x 8) Bytewide F-RAM Memory

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FM1808B
256-Kbit (32 K × 8) Bytewide F-RAM Memory
256-Kbit (32 K × 8) Bytewide F-RAM Memory
Features
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32 K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 32 K × 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 15 mA (max)
Standby current 25 A (typ)
Voltage operation: VDD = 4.5 V to 5.5 V
Industrial temperature: –40 C to +85 C
28-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM1808B is a 32 K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM1808B operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Minimum read and write cycle times
are equal. The F-RAM memory is nonvolatile due to its unique
ferroelectric memory process. These features make the
FM1808B ideal for nonvolatile memory applications requiring
frequent or rapid writes.
The device is available in a 28-pin SOIC surface mount package.
Device specifications are guaranteed over the industrial
temperature range –40 °C to +85 °C.
For a complete list of related documentation, click here.
Logic Block Diagram
A14-0
A14-0
32 K x 8
F-RAM Array
CE
Control
WE Logic
OE
I/O Latch & Bus Driver
DQ 7-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-86209 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 4, 2015


Cypress Semiconductor Electronic Components Datasheet

FM1808B Datasheet

256-Kbit (32 K x 8) Bytewide F-RAM Memory

No Preview Available !

FM1808B
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Device Operation .............................................................. 4
Memory Architecture ................................................... 4
Memory Operation ....................................................... 4
Read Operation ........................................................... 4
Write Operation ........................................................... 4
Pre-charge Operation .................................................. 4
Endurance ......................................................................... 4
F-RAM Design Considerations ........................................ 5
Maximum Ratings ............................................................. 7
Operating Range ............................................................... 7
DC Electrical Characteristics .......................................... 7
Data Retention and Endurance ....................................... 8
Capacitance ...................................................................... 8
Thermal Resistance .......................................................... 8
AC Test Conditions .......................................................... 8
AC Switching Characteristics ......................................... 9
SRAM Read Cycle ...................................................... 9
SRAM Write Cycle ..................................................... 10
Power Cycle Timing ....................................................... 12
Functional Truth Table ................................................... 13
Ordering Information ...................................................... 14
Ordering Code Definitions ......................................... 14
Package Diagram ............................................................ 15
Acronyms ........................................................................ 16
Document Conventions ................................................. 16
Units of Measure ....................................................... 16
Document History Page ................................................. 17
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC® Solutions ...................................................... 18
Cypress Developer Community ................................. 18
Technical Support ..................................................... 18
Document Number: 001-86209 Rev. *E
Page 2 of 18


Part Number FM1808B
Description 256-Kbit (32 K x 8) Bytewide F-RAM Memory
Maker Cypress Semiconductor
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FM1808B Datasheet PDF






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