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FM1808B - 256-Kbit (32 K x 8) Bytewide F-RAM Memory

Datasheet Summary

Features

  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (see the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • SRAM and EEPROM compatible.
  • Industry-standard 32 K × 8 SRAM and EEPROM pinout.
  • 70-ns access time, 130-ns cycle time.
  • Superior to battery-backed SRAM modules.
  • No battery concerns.

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Datasheet preview – FM1808B

Datasheet Details

Part number FM1808B
Manufacturer Cypress Semiconductor
File Size 307.44 KB
Description 256-Kbit (32 K x 8) Bytewide F-RAM Memory
Datasheet download datasheet FM1808B Datasheet
Additional preview pages of the FM1808B datasheet.

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Full PDF Text Transcription

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FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ SRAM and EEPROM compatible ❐ Industry-standard 32 K × 8 SRAM and EEPROM pinout ❐ 70-ns access time, 130-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resistant to negative voltage undershoots ■ Low power consumption ❐ Active current 15 mA (max) ❐ Standby current 25 A (
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