Datasheet4U Logo Datasheet4U.com

FM24C04B - 4-Kbit (512 x 8) Serial (I2C) F-RAM

Description

The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Features

  • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See Data Retention and Endurance on page 10).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast 2-wire Serial interface (I2C).
  • Up to 1-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Low power consumption.

📥 Download Datasheet

📁 Similar Datasheet

  • FM24C04B - 4Kb Serial 5V F-RAM Memory (Ramtron)
  • FM24C04B - 2-Wire Serial EEPROM (Fudan)
  • FM24C04 - 2-Wire Serial EEPROM (Fudan)
  • FM24C04A - 4Kb FRAM Serial Memory (Ramtron)
  • FM24C04C - 4Kb Serial 5V F-RAM Memory (Ramtron)
  • FM24C04U - 4K-Bit Standard 2-Wire Bus Interface Serial EEPROM (Fairchild Semiconductor)
  • FM24C02 - 2-Wire Serial EEPROM (Fudan)
  • FM24C02A - 2-Wire Serial EEPROM (Fudan)
  • FM24C02B - 2-Wire Serial EEPROM (Fudan)
  • FM24C02C - 2-Wire Serial EEPROM (Fudan)
Other Datasheets by Cypress Semiconductor
  • FM24C16B - 16-Kbit (2K x 8) Serial (I2C) F-RAM
  • FM24C64B - 64-Kbit (8K x 8) Serial (I2C) F-RAM
  • FM24CL04B - 4-Kbit (512 x 8) Serial (I2C) F-RAM
  • FM24CL16B - 16-Kbit (2K x 8) Serial (I2C) F-RAM
  • FM24CL64B - 64-Kbit (8K x 8) Serial (I2C) F-RAM
  • FM24V01A - 128-Kbit (16K x 8) Serial (I2C) F-RAM
  • FM24V02A - 256-Kbit (32K x 8) Serial (I2C) F-RAM
  • FM24V05 - 512-Kbit (64 K x 8) Serial (I2C) F-RAM

Full PDF Text Transcription

Click to expand full text
FM24C04B 4-Kbit (512 × 8) Serial (I2C) F-RAM 4-Kbit (512 × 8) Serial (I2C) F-RAM Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 10) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Low power consumption ❐ 100 A active current at 100 kHz ❐ 4 A (typ) standby current ■ Voltage operation: VDD = 4.5 V to 5.
Published: |