Datasheet Summary
256-Kbit (32 K × 8) Serial (I2C) F-RAM
256-Kbit (32 K × 8) Serial (I2C) F-RAM
Features
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast 2-wire Serial interface (I2C)
- Up to 1-MHz frequency
- Direct hardware replacement for serial (I2C) EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Low power consumption
- 100 A active current at 100 kHz
- 15 A (typ) standby current
- Wide voltage operation: VDD = 2.7 V to 5.5 V
- Industrial temperature:
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