FM25V01 Datasheet | Cypress

Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention No Delay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the plexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V01 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may mence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. These capabilities make the FM25V01 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of Serial Flash can cause data loss. The FM25V01 provides substantial benefits to users of Serial Flash as a hardware drop-in replacement. The device uses the high-speed SPI bus, which Device ID Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Low Voltage Operation 2.0V - 3.6V Active Current 120 A (typ. @ 1MHz) Standby Current 90 A (typ.) Sleep Mode Current 5 A (typ.) Industry Standard Configurations Industrial Temperature -40 C to +85 C 8-pin...