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FM25V10 Datasheet 1mb Serial 3v F-ram Memory

Manufacturer: Cypress (now Infineon)

Overview: FM25V10 1-Mbit (128K × 8) Serial (SPI) F-RAM 1-Mbit (128K × 8) Serial (SPI).

General Description

The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Key Features

  • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See Data Retention and Endurance on page 16).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Very fast serial peripheral interface (SPI).
  • Up to 40-MHz frequency.
  • Direct hardware replacement for serial flash and EEPROM.
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophistic.

FM25V10 Distributor