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Cypress Semiconductor Electronic Components Datasheet

FM25V10 Datasheet

1Mb Serial 3V F-RAM Memory

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FM25V10
1-Mbit (128K × 8) Serial (SPI) F-RAM
1-Mbit (128K × 8) Serial (SPI) F-RAM
Features
1-Mbit ferroelectric random access memory (F-RAM) logically
organized as 128K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM25VN10)
Low power consumption
300 A active current at 1 MHz
90 A (typ) standby current
5 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 C to +85 C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM25V10 is a 1-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V10 performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V10 is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25V10 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V10 provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V10 uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The
FM25VN10 is offered with a unique serial number that is
read-only and can be used to identify a board or system. Both
the devices incorporates a read-only Device ID that allows the
host to determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
WP
CS
HOLD
SCK
SI
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
Address Register
Counter
17
128 K x 8
F-RAM Array
8
Data I/O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-84499 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 30, 2016


Cypress Semiconductor Electronic Components Datasheet

FM25V10 Datasheet

1Mb Serial 3V F-RAM Memory

No Preview Available !

FM25V10
Contents
Pinouts .............................................................................. 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ................................................... 4
Serial Peripheral Interface – SPI Bus .......................... 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register ..................................... 8
WRSR - Write Status Register .................................... 8
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 9
Fast Read Operation ................................................... 9
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 11
Device ID ................................................................... 11
Unique Serial Number (FM25VN10 only) .................. 12
Function to Calculate CRC ........................................ 13
Endurance ................................................................. 14
Maximum Ratings ........................................................... 15
Operating Range ............................................................. 15
DC Electrical Characteristics ........................................ 15
Data Retention and Endurance ..................................... 16
Capacitance .................................................................... 16
Thermal Resistance ........................................................ 16
AC Test Conditions ........................................................ 16
AC Switching Characteristics ....................................... 17
Power Cycle Timing ....................................................... 19
Ordering Information ...................................................... 20
Ordering Code Definitions ......................................... 20
Package Diagrams .......................................................... 21
Acronyms ........................................................................ 23
Document Conventions ................................................. 23
Units of Measure ....................................................... 23
Document History Page ................................................. 24
Sales, Solutions, and Legal Information ...................... 25
Worldwide Sales and Design Support ....................... 25
Products .................................................................... 25
PSoC®Solutions ....................................................... 25
Cypress Developer Community ................................. 25
Technical Support ..................................................... 25
Document Number: 001-84499 Rev. *H
Page 2 of 25


Part Number FM25V10
Description 1Mb Serial 3V F-RAM Memory
Maker Cypress Semiconductor
Total Page 25 Pages
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