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S26KL512S Datasheet high-speed CMOS MirrorBit NOR flash devices

Manufacturer: Cypress (now Infineon)

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Overview

S26KL512S/S26KS512S S26KL256S/S26KS256S S26KL128S/S26KS128S 512 Mb (64 MB)/256 Mb (32 MB)/ 128 Mb (16 MB), 1.8V/3.

Key Features

  • 3.0V I/O, 11 bus signals.
  • Single ended clock.
  • 1.8V I/O, 12 bus signals.
  • Differential clock (CK, CK#).
  • Chip Select (CS#).
  • 8-bit data bus (DQ[7:0]).
  • Read-Write Data Strobe (RWDS).
  • HyperFlash™ memories use RWDS only as a Read Data Strobe.
  • Up to 333 MBps sustained read throughput.
  • DDR.
  • two data transfers per clock.
  • 166-MHz clock rate (333 MBps) at 1.8V VCC.
  • 100-MHz clock rate (200 MBps) at 3.0V VCC.
  • 96-ns initial random read.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo S26KL512S 512Mb (64MB) HYPER FLASH Infineon

More Datasheets from Cypress (now Infineon)

Part Number Description
S26KL128S high-speed CMOS MirrorBit NOR flash devices
S26KL256S high-speed CMOS MirrorBit NOR flash devices
S26KS128S high-speed CMOS MirrorBit NOR flash devices
S26KS256S high-speed CMOS MirrorBit NOR flash devices
S26KS512S high-speed CMOS MirrorBit NOR flash devices