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S29JL032J Datasheet Simultaneous Read/write Flash

Manufacturer: Cypress (now Infineon)

Overview: S29JL032J 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Distinctive Characteristics Architectural Advantages ■ Simultaneous Read/Write operations ❐ Data can be continuously read from one bank while executing erase/program functions in another bank. ❐ Zero latency between read and write operations ■ Multiple bank architecture ❐ Four bank architectures available (see Table 2 on page 15). ■ Boot sectors ❐ Top or bottom boot sector configurations available ❐ Any combination of sectors can be erased ■ Manufactured on 0.11 µm Process Technology ■ Secured Silicon Region: Extra 256 byte sector ❐ Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function ❐ Customer lockable: One-time programmable only. Once locked, data cannot be changed ■ Zero power operation ❐ Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero.

Key Features

  • Supports Common Flash Memory Interface (CFI).
  • Erase suspend/Erase resume.
  • Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
  • Data# polling and toggle bits.
  • Provides a software method of detecting the status of program or erase operations.
  • Unlock bypass program command.
  • Reduces overall programming time when issuing multiple program command sequences Hardware Features.
  • Ready.

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