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S29JL064J - Simultaneous Read/Write Flash

Overview

S29JL064J Distinctive Characteristics 64-Mbit (8M × 8-Bit/4M × 16-Bit), 3 V, Simultaneous Read/Write Flash Architectural Advantages  Simultaneous Read/Write operations – Data can be continuously read from one bank while executing erase/program functions in another bank – Zero latency between read and write operations  Flexible bank architecture – Read may occur in any of the three banks not being programmed or erased – Four banks may be grouped by customer to achieve desired bank divisions  Boot sectors – Top and bottom boot sectors in the same device – Any combination of sectors can be erased  Manufactured on 0.11 µm Process Technology  Secured Silicon Region: Extra 256-byte sector – Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function – Customer lockable: One-time programmable only.

Key Features

  • Supports Common Flash Memory Interface (CFI).
  • Erase suspend/erase resume.
  • Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
  • Data# polling and toggle bits.
  • Provides a software method of detecting the status of program or erase operations.
  • Unlock bypass program command.
  • Reduces overall programming time when issuing multiple program command sequences Hardware Features.