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Cypress Semiconductor Electronic Components Datasheet

S29PL127J Datasheet

Page Mode and Simultaneous Read/Write Flash memory device

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S29PL-J
128-/64-/32-Mbit (8/4/2M × 16-Bit),
3 V, Flash with Enhanced VersatileIO™
S29PL-J, 128-/64-/32-Mbit (8/4/2M × 16-Bit), 3 V, Flash with Enhanced VersatileIO™
Distinctive Characteristics
Architectural Advantages
128-/64-/32-Mbit Page Mode devices
Page size of 8 words: Fast page read access from random
locations within the page
Single power supply operation
Full Voltage range: 2.7 to 3.6 V read, erase, and program
operations for battery-powered applications
Simultaneous Read/Write Operation
Data can be continuously read from one bank while executing
erase/program functions in another bank
Zero latency switching from write to read operations
FlexBank Architecture (PL127J/PL064J/PL032J)
4 separate banks, with up to two simultaneous operations
per device
Bank A:
PL127J -16 Mbit (4 Kw 8 and 32 Kw 31)
PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15)
PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7)
Bank B:
PL127J - 48 Mbit (32 Kw 96)
PL064J - 24 Mbit (32 Kw 48)
PL032J - 12 Mbit (32 Kw 24)
Bank C:
PL127J - 48 Mbit (32 Kw 96)
PL064J - 24 Mbit (32 Kw 48)
PL032J - 12 Mbit (32 Kw 24)
Bank D:
PL127J -16 Mbit (4 Kw 8 and 32 Kw 31)
PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15)
PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7)
Enhanced VersatileI/O(VIO) Control
Output voltage generated and input voltages tolerated on all
control inputs and I/Os is determined by the voltage on the
VIO pin
VIO options at 1.8 V and 3 V I/O for PL127J devices
3V VIO for PL064J and PL032J devices
Secured Silicon Sector region
Up to 128 words accessible through a command sequence
Up to 64 factory-locked words
Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110-nm process technology
Data Retention: 20 years typical
Cycling Endurance: 1 million cycles per sector typical
Performance Characteristics
High Performance
Page access times as fast as 20 ns
Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
45 mA active read current
17 mA program/erase current
0.2 A typical standby mode current
Software Features
Software command-set compatible with JEDEC 42.4 standard
– Backward compatible with Am29F, Am29LV, Am29DL, and
AM29PDL families and MBM29QM/RM, MBM29LV,
MBM29DL, MBM29PDL families
CFI (Common Flash Interface) compliant
Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
Erase Suspend / Erase Resume
Suspends an erase operation to allow read or program op-
erations in other sectors of same bank
Program Suspend / Program Resume
Suspends a program operation to allow read operation from
sectors other than the one being programmed
Unlock Bypass Program command
Reduces overall programming time when issuing multiple
program command sequences
Hardware Features
Ready/Busy# pin (RY/BY#)
Provides a hardware method of detecting program or erase
cycle completion
Hardware reset pin (RESET#)
Hardware method to reset the device to reading array data
WP#/ ACC (Write Protect/Acceleration) input
AwtoVrdILs, ehcatrodrws.are level protection for the first and last two 4K
At VIH, allows removal of sector protection
tAint gVHH, provides accelerated programming in a factory set-
Persistent Sector Protection
A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program
or erase operations within that sector
Sectors can be locked and unlocked in-system at VCC level
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00615 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 20, 2019


Cypress Semiconductor Electronic Components Datasheet

S29PL127J Datasheet

Page Mode and Simultaneous Read/Write Flash memory device

No Preview Available !

S29PL-J
Password Sector Protection
A sophisticated sector protection method to lock combina-
tions of individual sectors and sector groups to prevent pro-
gram or erase operations within that sector using a user-de-
fined 64-bit password
Package Options
11 8 mm, 80-ball Fine-pitch BGA (PL127J) (VBG080)
8.15 6.15 mm, 48-ball Fine pitch BGA (PL064J/PL032J)
(VBK048)
20 14 mm, 56-pin TSOP (PL127J) (TS056)
Document Number: 002-00615 Rev. *F
Page 2 of 80


Part Number S29PL127J
Description Page Mode and Simultaneous Read/Write Flash memory device
Maker Cypress Semiconductor
Total Page 30 Pages
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