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Cypress Semiconductor Electronic Components Datasheet

S34MS04G2 Datasheet

1 Gbit/2 Gbit/4 Gbit SLC NAND Flash

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S34MS01G2
S34MS02G2
S34MS04G2
1 Gbit/2 Gbit/4 Gbit
SLC NAND Flash for Embedded
Distinctive Characteristics
Density
– 1 Gb / 2 Gb / 4 Gb
Architecture
– Input / Output Bus Width: 8 bits / 16 bits
– Page size:
– x8
1 Gb: (2048 + 64) bytes; 64-byte spare area
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area
– x16
1 Gb: (1024 + 32) words; 32-word spare area
2 Gb / 4Gb: (1024 + 64) words; 64-word spare area
– Block size: 64 Pages
– x8
1 Gb: 128 KB + 4 KB
2 Gb / 4 Gb: 128 KB + 8 KB
– x16
1 Gb: (64k + 2k) words
2 Gb / 4 Gb: (64k + 4k) words
– Plane size:
– x8
1 Gb: 1024 Blocks per Plane or (128 MB + 4 MB)
2 Gb: 1024 Blocks per Plane or (128 MB + 8 MB)
4 Gb: 2048 Blocks per Plane or (256 MB + 16 MB)
– x16
1 Gb: 1024 Blocks per Plane or (64M + 2M) words
2 Gb: 1024 blocks per plane or (64M + 4M) words
4 Gb: 2048 blocks per plane or (128M + 8M) words
– Device size:
– 1 Gb: 1 plane per device or 128 MB
– 2 Gb: 2 planes per device or 256 MB
– 4 Gb: 2 planes per device or 512 MB
NAND flash interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data, and Commands multiplexed
Supply voltage
– 1.8 V device: VCC = 1.7 V ~ 1.95 V
Security
– One Time Programmable (OTP) area
– Serial number (unique ID) (Contact factory for support)
– Hardware program/erase disabled during power transition
Additional features
– 2 Gb and 4 Gb parts support Multiplane Program and
Erase commands
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back
Program
– Supports Read Cache
Electronic signature
– Manufacturer ID: 01h
Operating temperature
– Industrial: 40 °C to 85 °C
– Industrial Plus: 40 °C to 105 °C
Performance
Page Read / Program
– Random access: 25 µs (Max) (S34MS01G2)
– Random access: 30 µs (Max) (S34MS02G2, S34ML04G2)
– Sequential access: 45 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
Block Erase (S34MS01G2)
– Block Erase time: 3.0 ms (Typ)
Block Erase / Multiplane Erase (S34MS02G2, S34MS04G2)
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes (x8) or 264 words (x16))
– 10-year Data retention (Typ)
– For one plane structure (1-Gb density)
– Block zero is valid and will be valid for at least 1,000
program-erase cycles with ECC
– For two plane structures (2-Gb and 4-Gb densities)
– Blocks zero and one are valid and will be valid for at
least 1,000 program-erase cycles with ECC
Package options
– Pb-free and Low Halogen
– 48-Pin TSOP 12 20 1.2 mm
– 63-Ball BGA 9 11 1 mm
– 67-Ball BGA 8 6.5 1 mm (S34MS01G2, S34MS02G2)
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-03238 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 14, 2016


Cypress Semiconductor Electronic Components Datasheet

S34MS04G2 Datasheet

1 Gbit/2 Gbit/4 Gbit SLC NAND Flash

No Preview Available !

S34MS01G2
S34MS02G2
S34MS04G2
Contents
1. General Description...................................................... 3
1.1 Logic Diagram .................................................. 4
1.2 Connection Diagram......................................... 5
1.3 Pin Description ................................................. 7
1.4 Block Diagram .................................................. 8
1.5 Array Organization............................................ 9
1.6 Addressing...................................................... 11
1.6.1 S34MS01G211
1.6.2 S34MS02G212
1.6.3 S34MS04G213
1.7 Mode Selection............................................... 14
2. Bus Operation ............................................................. 15
2.1 Command Input .............................................. 15
2.2 Address Input ................................................. 15
2.3 Data Input ....................................................... 15
2.4 Data Output .................................................... 15
2.5 Write Protect................................................... 15
2.6 Standby .......................................................... 15
3. Command Set.............................................................. 16
3.1 Page Read...................................................... 17
3.2 Page Program ................................................ 17
3.3 Multiplane Program
— S34MS02G2 and S34MS04G2.................. 18
3.4 Page Reprogram ............................................ 18
3.5 Block Erase .................................................... 20
3.6 Multiplane Block Erase
— S34MS02G2 and S34MS04G2.................. 20
3.7 Copy Back Program ....................................... 21
3.8 Read Status Register ..................................... 22
3.9 Read Status Enhanced
— S34MS02G2 and S34MS04G2.................. 22
3.10 Read Status Register Field Definition............. 22
3.11 Reset .............................................................. 23
3.12 Read Cache.................................................... 23
3.13 Cache Program .............................................. 24
3.14 Multiplane Cache Program
— S34MS02G2 and S34MS04G2.................. 25
3.15 Read ID .......................................................... 26
3.16 Read ID2 ........................................................ 28
3.17 Read ONFI Signature ..................................... 28
3.18 Read Parameter Page.................................... 28
3.19 Read Unique ID (Contact Factory) ................. 31
3.20 One-Time Programmable (OTP) Entry........... 32
4. Signal Descriptions .................................................... 33
4.1 Data Protection and Power
On / Off Sequence.......................................... 33
4.2 Ready/Busy .................................................... 33
4.3 Write Protect Operation .................................. 34
5. Electrical Characteristics ........................................... 35
5.1 Valid Blocks .................................................... 35
5.2 Absolute Maximum Ratings............................ 35
5.3 AC Test Conditions......................................... 35
5.4 AC Characteristics.......................................... 36
5.5 DC Characteristics.......................................... 37
5.6 Pin Capacitance ............................................. 38
5.7 Program / Erase Characteristics..................... 38
6. Timing Diagrams......................................................... 39
6.1 Command Latch Cycle ................................... 39
6.2 Address Latch Cycle ...................................... 40
6.3 Data Input Cycle Timing ................................. 40
6.4 Data Output Cycle Timing
(CLE=L, WE#=H, ALE=L, WP#=H) ................ 41
6.5 Data Output Cycle Timing
(EDO Type, CLE=L, WE#=H, ALE=L)............ 41
6.6 Page Read Operation..................................... 42
6.7 Page Read Operation
(Interrupted by CE#) ....................................... 43
6.8 Page Read Operation
Timing with CE# Don’t Care ........................... 44
6.9 Page Program Operation ............................... 44
6.10 Page Program Operation
Timing with CE# Don’t Care ........................... 45
6.11 Page Program Operation
with Random Data Input ................................. 45
6.12 Random Data Output In a Page ..................... 46
6.13 Multiplane Page Program Operation
— S34MS02G2 and S34MS04G2.................. 46
6.14 Block Erase Operation ................................... 47
6.15 Multiplane Block Erase
— S34MS02G2 and S34MS04G2.................. 48
6.16 Copy Back Read with Optional
Data Readout ................................................. 49
6.17 Copy Back Program Operation
With Random Data Input ................................ 49
6.18 Multiplane Copy Back Program
— S34MS02G2 and S34MS04G2.................. 50
6.19 Read Status Register Timing.......................... 51
6.20 Read Status Enhanced Timing....................... 52
6.21 Reset Operation Timing ................................. 52
6.22 Read Cache ................................................... 53
6.23 Cache Program .............................................. 55
6.24 Multiplane Cache Program
— S34MS02G2 and S34MS04G2.................. 56
6.25 Read ID Operation Timing.............................. 58
6.26 Read ID2 Operation Timing............................ 58
6.27 Read ONFI Signature Timing ......................... 59
6.28 Read Parameter Page Timing ........................ 59
6.29 Read Unique ID Timing (Contact Factory) ..... 60
6.30 OTP Entry Timing ........................................... 60
6.31 Power On and Data Protection Timing ........... 61
6.32 WP# Handling ................................................ 62
7. Physical Interface ....................................................... 63
7.1 Physical Diagram ........................................... 63
8. System Interface ......................................................... 66
9. Error Management ...................................................... 68
9.1 System Bad Block Replacement .................... 68
9.2 Bad Block Management ................................. 69
10. Ordering Information .................................................. 70
11. Document History ....................................................... 71
Sales, Solutions, and Legal Information ........................... 75
Document Number: 002-03238 Rev. *D
Page 2 of 75


Part Number S34MS04G2
Description 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash
Maker Cypress Semiconductor
Total Page 30 Pages
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