BTD5213J3 Description
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD5213J3 Spec. 2010.12.06 Revised Date.
BTD5213J3 Key Features
- Low collector saturation voltage
- High breakdown voltage, VCEO=100V (min.)
- High collector current, IC(max)=1A (DC)
- Pb-free lead plating and halogen-free package