* Low collector saturation voltage
* High breakdown voltage, VCEO=100V (min.)
* High collector current, IC(max)=1A (DC)
* Pb-free lead plating and halogen-free package Symbol BTD5213J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information
BTD5213J3 Datasheet (319.30 KB)
BTD5213J3
Cystech
319.30 KB
General purpose npn epitaxial planar transistor.
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD5213J3 Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2015.0.
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