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MTN1308E3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package www. DataSheet. net/ Symbol MTN1308E3 Outline TO-220 G:Gate D:Drain S:Source G D S MTN1308E3 CYStek Product Specification Datasheet pdf - http://www. DataSheet4U. co. kr/ CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 2/6 Limits Un.

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Datasheet Details

Part number MTN1308E3
Manufacturer Cystech
File Size 313.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN1308E3 Datasheet

Full PDF Text Transcription for MTN1308E3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTN1308E3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 1/6 MTN1308E3 Description BVDSS RD...

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009.02.23 Revised Date : Page No. : 1/6 MTN1308E3 Description BVDSS RDSON ID 75V 13 mΩ 80A The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package www.DataSheet.net/ Symbol MTN1308E3 Outline TO-220 G:Gate D:Drain S:Source G D S MTN1308E3 CYStek Product Specification Datasheet p