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B35N04J3 Datasheet MTB35N04J3

Manufacturer: Cystech Electonics

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Datasheet Details

Part number B35N04J3
Manufacturer Cystech Electonics
File Size 213.20 KB
Description MTB35N04J3
Datasheet download datasheet B35N04J3 Datasheet

Overview

CYStech Electronics Corp.

Spec.

No.

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Ene.

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