* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate
B35N04J3 Datasheet (213.20 KB)
B35N04J3
Cystech Electonics
213.20 KB
Mtb35n04j3.
CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N.
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