BTC1510FP Datasheet | Cystech Electonics

Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. - High BVCEO - Low VCE(SAT) - High current gain - Monolithic construction with built-in base-emitter shunt resistors - Pb-free package Features : Equivalent Circuit BTC1510FP C B R1≈8k R2≈120 Outline TO-220FP E B：Base C：Collector E：Emitter CYStek Product Specification .. CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : - 1. Single Pulse Pw=100ms Spec. No. : C652FP Issued Date : 2005.03.29 Revised Date : Page No. : 2/5 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits 150 150 5 10 15 2 60 62.5 2.08 150 -55~+150 Unit V V V - 1 A W °C/W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO - VCE(sat) 1 - VCE(sat) 2 - VCE(sat) 3 - VBE(sat) - VBE(on) 1 - VBE(on) 2 - VFEC - h FE 1 - h FE 2 Min. 150 150 2 100 Typ. Max. 200 200 2 2 3 1.5 2 2.8 4.5 3 20 Unit V V µA µA m A V V V V V V V K Test Conditions IC=100µA, IE=0 IC=1m A, IB=0 VCE=150V, IE=0 VCB=150V, IE=0 VEB=5V, IC=0 IC=5A, IB=10m A IC=10A, IB=100m A IC=5A, IB=2.5m A IC=5A, IB=5m A VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCE=3V, IC=5A VCE=3V, IC=10A - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% CYStek Product...