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Cystech Electonics

BTC1510J3 Datasheet Preview

BTC1510J3 Datasheet

NPN Epitaxial Planar Transistor

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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTC1510J3
BVCEO
IC
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2018.01.10
Page No. : 1/7
150V
10A
Description
The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
High BVCEO
Low VCE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
TO-252 surface mount package
RoHS compliant package
Equivalent Circuit
BTC1510J3
B
C
Outline
TO-252(DPAK)
R18k R2120
E
BBase CCollector EEmitter
B CE
Ordering Information
Device
BTC1510J3-XX-T3-X
Package
TO-252
(RoHS compliant package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTC1510J3
CYStek Product Specification




Cystech Electonics

BTC1510J3 Datasheet Preview

BTC1510J3 Datasheet

NPN Epitaxial Planar Transistor

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2018.01.10
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25)
Pd(TC=25)
Tj
Tstg
Limits
150
150
5
10
15
1.75
20
-55~+150
-55~+150
*1
Unit
V
V
V
A
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE1
*hFE2
Min.
150
150
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
200
2
1.5
3
2
2
2.8
4.5
3
20
-
Unit Test Conditions
V IC=100μA, IE=0
V IC=1mA, IB=0
μA VCE=150V, IE=0
μA VCB=150V, IE=0
mA VEB=5V, IC=0
V IC=5A, IB=10mA
V IC=10A, IB=100mA
V IC=5A, IB=2.5mA
V IC=5A, IB=5mA
V VCE=3V, IC=5A
V VCE=3V, IC=10A
V IC=5A
K VCE=3V, IC=5A
- VCE=3V, IC=10A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification Of VCE(sat) 1
Rank
KA
Range
<1.1V
N
<1.5V
BTC1510J3
CYStek Product Specification


Part Number BTC1510J3
Description NPN Epitaxial Planar Transistor
Maker Cystech Electonics
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