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Cystech Electonics

BTC1510T3 Datasheet Preview

BTC1510T3 Datasheet

NPN Epitaxial Planar Transistor

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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTC1510T3
Spec. No. : C652T3
Issued Date : 2003.09.30
Revised Date :2006.05.24
Page No. : 1/5
Description
The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
High BVCEO
Low VCE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
Pb-free package
Equivalent Circuit
BTC1510T3
B
R18k R2120
BBase
CCollector
EEmitter
E
C
Outline
TO-126
ECB
BTC1510T3
CYStek Product Specification




Cystech Electonics

BTC1510T3 Datasheet Preview

BTC1510T3 Datasheet

NPN Epitaxial Planar Transistor

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C652T3
Issued Date : 2003.09.30
Revised Date :2006.05.24
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25)
Pd(TC=25)
Tj
Tstg
Limits
150
150
5
10
15
1
10
150
-55~+150
*1
Unit
V
V
V
A
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE 1
*hFE 2
Min.
150
150
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
200
2
1.5
3
2
2
2.8
4.5
3
20
-
Unit Test Conditions
V IC=100µA, IE=0
V IC=1mA, IB=0
µA VCE=150V, IE=0
µA VCB=150V, IE=0
mA VEB=5V, IC=0
V IC=5A, IB=10mA
V IC=10A, IB=100mA
V IC=5A, IB=2.5mA
V IC=5A, IB=5mA
V VCE=3V, IC=5A
V VCE=3V, IC=10A
V IC=5A
K VCE=3V, IC=5A
- VCE=3V, IC=10A
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
BTC1510T3
CYStek Product Specification


Part Number BTC1510T3
Description NPN Epitaxial Planar Transistor
Maker Cystech Electonics
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