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Cystech Electonics

BTC1815A3 Datasheet Preview

BTC1815A3 Datasheet

General Purpose NPN Epitaxial Planar Transistor

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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 1/4
BTC1815A3
Description
The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching.
Features
High voltage and high current : VCEO=50V(min), IC=150mA(max)
High HFE and excellent linearity
Complementary to BTA1015A3
Symbol
BTC1815A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @Ta=25
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
RθJA
Tj
Tstg
BTC1815A3
ECB
Limits
60
50
5
150
50
400
250
125
-55~+125
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
CYStek Product Specification




Cystech Electonics

BTC1815A3 Datasheet Preview

BTC1815A3 Datasheet

General Purpose NPN Epitaxial Planar Transistor

No Preview Available !

www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE1
hFE2
fT
Cob
Min.
60
50
5
-
-
-
70
25
80
-
Typ.
-
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
100
100
0.25
1.0
700
-
-
3.5
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA
VCB=10V, IE=0,f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Classification of hFE 1
Rank
O
Range
70~140
Y
120~240
GR
200~400
BL
350~700
BTC1815A3
CYStek Product Specification


Part Number BTC1815A3
Description General Purpose NPN Epitaxial Planar Transistor
Maker Cystech Electonics
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